Cause analysis of the faults in HARC etching processes by using the PI‐VM model for OLED display manufacturing

摘要

High-aspect ratio contact (HARC) etching is a bottleneck step of the high-definition organic light emitting diode (OLED) display manufacturing processes. HARC process is frequently failed during the mass production, because this requires the high-energy ion flux and the sidewall passivation, simultaneously. To analyze the cause of HARC process failures, plasma information (PI)-based virtual metrology (VM) algorithm was developed by using the equipment engineering system and the optical emission spectroscopy data recorded from the fab. Developed PI-VM could predict the process faults with >90% of the accuracy, and the cause analysis function was also validated. We could suggest a right solution to the failure, and more efficient management of the OLED display manufacturing was possible.