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首页> 外文期刊>Physical review.B.Condensed matter and materials physics >Electrically induced breakdown of the quantum Hall effect at different Hall bar widths: Visualizing the edge- and bulk-dominated regimes within a quantum Hall plateau
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Electrically induced breakdown of the quantum Hall effect at different Hall bar widths: Visualizing the edge- and bulk-dominated regimes within a quantum Hall plateau

机译:在不同的霍尔栏宽度的Quantum Hall效应的诱导击穿:在量子霍尔高原内可视化边缘和批量主导的制度

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We present systematic investigations of the electrically induced breakdown of the integer quantum Hall effect (QHE) in (Al.Ga)As-based Hall bars of different widths ranging from 7 to 70 μm. It is striking that, for the narrow Hall bars, the threshold values for the applied voltage that induces the breakdown of the longitudinal zero-resistance state differ appreciably between the upper and lower sides of a quantum Hall (QH) plateau. When moving from the low magnetic field side of the QH plateau to higher magnetic fields, the threshold rises in a strongly superlinear manner until-at the expected integer value for the Landau level (LL) filling factor in the bulk of the two-dimensional electron system (2DES)-the threshold value abruptly drops to low values for the rest of the plateau. With increasing widths of the Hall bars, the zero-resistance state extends slightly further to higher magnetic field values. The threshold values on the low-magnetic field side are almost independent of the Hall bar width, whereas the threshold values on the high magnetic field side scale linearly with the Hall bar width. These observations correspond perfectly with the microscope picture of the QHE where the biased current flows in a dissipationless manner in electrically incompressible regions of the 2DES of locally the same LL filling factor, driven by the respective drop of the Hall voltage over the width of these incompressible regions. Owing to the self-consistent evolution of the electrically incompressible/compressible landscape within the 2DES as a function of magnetic field, a transition from an edge- to a bulk-dominated QH regime is described within a QH plateau. This microscopic picture was derived from sophisticated, long-lasting scanning probe experiments measuring Hall potential profiles on typically 15-μm-wide Hall bars. Conversely, performing systematic electrically induced breakdown measurements like those presented here would allow us to identify the presence of edge- and bulk-dominated regimes of the QHE in a wider variety of samples.
机译:我们在不同宽度范围为7至70μm的不同宽度的霍尔条中,提供了对整数霍尔效应(QHE)的电诱导的整数霍尔效应(QHE)的诱导击穿的系统研究。它醒目的是,对于窄霍尔条,施加电压的阈值,其在量子霍尔(QH)高原的上侧和下侧之间产生的纵向零电阻状态的击穿差异。当从QH高原的低磁场侧移动到较高的磁场时,阈值以强烈的方式升高,直到 - 在二维电子的大部分中的Landau水平(LL)填充因子的预期整数。系统(2DES) - 阈值突然下降到高原其余部分的低值。随着霍尔条的宽度增加,零电阻状态略微延伸到较高的磁场值。低磁场侧的阈值几乎与霍尔条宽度无关,而高磁场侧尺度上的阈值与霍尔条宽度线性尺寸。这些观察结果与QHE的显微镜图片完美对应,其中偏置电流以局部相同的LL填充因子的2DE的2DES的电不可压缩区域中的折射率方式流动,由霍尔电压的相应滴度在这些不可压缩的宽度上驱动地区。由于2DES内作为磁场的函数的电不可压缩/可压缩景观的自一致性演变,在QH高原内描述了从边缘到散装QH制度的过渡。这种微观图是源自复杂的长持续扫描探针实验,其通常为15μm宽的霍尔栏测量霍尔电位型材。相反,执行系统的系统电气诱导的击穿测量,如这里所示的那些将允许我们在更广泛的样品中识别QHE的边缘和体积主导的制度的存在。

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  • 来源
    《Physical review.B.Condensed matter and materials physics》 |2020年第20期|205306.1-205306.10|共10页
  • 作者单位

    Max-Planck-Institut fuer Festkoerperforschung Heisenbergstrasse 1 D-70569 Stuttgart Germany;

    Max-Planck-Institut fuer Festkoerperforschung Heisenbergstrasse 1 D-70569 Stuttgart Germany;

    Max-Planck-Institut fuer Festkoerperforschung Heisenbergstrasse 1 D-70569 Stuttgart Germany;

    Max-Planck-Institut fuer Festkoerperforschung Heisenbergstrasse 1 D-70569 Stuttgart Germany;

    Max-Planck-Institut fuer Festkoerperforschung Heisenbergstrasse 1 D-70569 Stuttgart Germany;

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