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Topology analysis for anomalous Hall effect in the noncollinear antiferromagnetic states of Mn_3AN (A = Ni, Cu, Zn, Ga, Ge, Pd, In, Sn, Ir, Pt)

机译:MN_3AN非可用反铁磁体态的异常霍尔效应的拓扑分析(A = Ni,Cu,Zn,Ga,Ge,Pd,In,Sn,IR,Pt)

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摘要

We investigate topological features of electronic structures which produce large anomalous Hall effect in the noncollinear antiferromagnetic metallic states of antiperovskite manganese nitrides by first-principles calculations. We first predict the stable magnetic structures of these compounds to be noncollinear antiferromagnetic structures characterized by either T-1g or T-2g irreducible representation by evaluating the total energy for all of the magnetic structures classified according to the symmetry and multipole moments. The topology analysis is next performed for the Wannier tight-binding models obtained from the first-principles band structures. Our results reveal the small Berry curvature induced through the coupling between occupied and unoccupied states with the spin-orbit coupling, which is widely spread around the Fermi surface in the Brillouin zone, dominantly contributes after the k-space integration to the anomalous Hall conductivity, while the local divergent Berry curvature around Weyl points has a rather small contribution to the anomalous Hall conductivity.
机译:我们调查电子结构的拓扑特征,通过第一原理计算在抗哌福氏锰氮化物中的非可折叠反铁磁性态态中产生大的异常霍尔效应。我们首先预测这些化合物的稳定磁性结构,其特征在于通过评估根据对称和多极矩分类的所有磁性结构的全能来评估T-1G或T-2G不可缩放表示的非可折叠反铁磁结构。接下来对从第一原理频带结构获得的Wannier紧密绑定模型进行拓扑分析。我们的结果揭示了通过搭乘于旋转轨道耦合的搭乘和未被占用的耦合引起的小浆果曲率,该旋转轨道耦合在布里渊区中的费米表面广泛蔓延,在K空间集成到异常霍尔电导率之后占主导地贡献,虽然Weyl Points周围的局部发散浆果曲率对异常霍尔电导率具有相当小的贡献。

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  • 来源
    《Physical review》 |2019年第9期|094426.1-094426.9|共9页
  • 作者单位

    Osaka Univ Inst Sci & Ind Res 8-1 Mihogaoka Ibaraki Osaka 5670047 Japan|Natl Inst Mat Sci Res & Serv Div Mat Data & Integrated Syst 1-2-1 Sengen Tsukuba Ibaraki 3050047 Japan|Osaka Univ Grad Sch Engn Sci Toyonaka Osaka 5608531 Japan;

    Tohoku Univ Ctr Computat Mat Sci Inst Mat Res Sendai Miyagi 9808577 Japan;

    Osaka Univ Inst Sci & Ind Res 8-1 Mihogaoka Ibaraki Osaka 5670047 Japan;

    Osaka Univ Inst Sci & Ind Res 8-1 Mihogaoka Ibaraki Osaka 5670047 Japan|Natl Inst Mat Sci Res & Serv Div Mat Data & Integrated Syst 1-2-1 Sengen Tsukuba Ibaraki 3050047 Japan;

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