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Calculating spin transport properties from first principles: Spin currents

机译:从第一原理计算旋转运输性质:旋转电流

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Local charge and spin currents are evaluated from the solutions of fully relativistic quantum mechanical scattering calculations for systems that include temperature-induced lattice and spin disorder as well as intrinsic alloy disorder. This makes it possible to determine material-specific spin transport parameters at finite temperatures. Illustrations are given for a number of important materials and parameters at 300 K. The spin-flip diffusion length l(sf) of Pt is determined from the exponential decay of a spin current injected into a long length of thermally disordered Pt; we find l(sf)(pt) = 5.3 +/- 0.4 nm. For the ferromagnetic substitutional disordered alloy permalloy (Py), we inject currents that are fully polarized parallel and antiparallel to the magnetization and calculate l(sf )from the exponential decay of their difference; we find l(sf)(py)= 2.8 +/- 0.1 nm. The transport polarization beta is found from the asymptotic polarization of a charge current in a long length of Py to be beta = 0.75 +/- 0.01. The spin Hall angle Theta(sH) is determined from the transverse spin current induced by the passage of a longitudinal charge current in thermally disordered Pt; our best estimate is Theta(Pt)(sH)= 4.5 +/- 1% corresponding to the experimental room-temperature bulk resistivity rho = 10.8 mu Omega cm.
机译:本地充电和旋转电流是从完全相对论的量子机械散射计算的解决方案中,包括温度诱导的晶格和旋转紊乱以及固有的合金障碍。这使得可以在有限温度下确定特定于材料的旋转传输参数。以300k的一些重要材料和参数给出了图示.Pt的旋转触发扩散长度L(SF)由注入长度的旋转电流的旋转电流的指数衰减确定;我们发现L(SF)(Pt)= 5.3 +/- 0.4 nm。对于铁磁性替代性无序交合金(PY),我们注入完全偏振并反平行的电流,并从其差异的指数衰减计算L(SF);我们发现L(SF)(py)= 2.8 +/- 0.1 nm。从长度的电流的渐近偏振中发现传输极化β从一定长度的py含有β= 0.75 +/- 0.01。旋转霍尔角θ(SH)由通过通过热紊乱的PT的纵向充电电流通过横向旋转电流确定;我们最好的估计是θ(pt)(sh)(sh)= 4.5 +/- 1%对应于实验室 - 温度散装电阻率rho = 10.8 muωcm。

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  • 来源
    《Physical review》 |2019年第14期|144409.1-144409.19|共19页
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    Univ Twente Fac Sci & Technol POB 217 NL-7500 AE Enschede Netherlands|Univ Twente MESA Inst Nanotechnol POB 217 NL-7500 AE Enschede Netherlands;

    Univ Twente Fac Sci & Technol POB 217 NL-7500 AE Enschede Netherlands|Univ Twente MESA Inst Nanotechnol POB 217 NL-7500 AE Enschede Netherlands;

    Univ Twente Fac Sci & Technol POB 217 NL-7500 AE Enschede Netherlands|Univ Twente MESA Inst Nanotechnol POB 217 NL-7500 AE Enschede Netherlands|Beijing Normal Univ Ctr Adv Quantum Studies Beijing 100875 Peoples R China|Beijing Normal Univ Dept Phys Beijing 100875 Peoples R China;

    Univ Twente Fac Sci & Technol POB 217 NL-7500 AE Enschede Netherlands|Univ Twente MESA Inst Nanotechnol POB 217 NL-7500 AE Enschede Netherlands|Beijing Normal Univ Ctr Adv Quantum Studies Beijing 100875 Peoples R China|Beijing Normal Univ Dept Phys Beijing 100875 Peoples R China;

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