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Scanning tunneling microscope study of quantum Hall isospin ferromagnetic states in the zero Landau level in a graphene monolayer

机译:扫描隧道显微镜研究石墨烯单层中零朗道能级的量子霍尔同位旋铁磁态

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A number of quantum Hall isospin ferromagnetic (QHIFM) states have been predicted in the "relativistic" zero Landau level (LL) of the graphene monolayer. However, identification of these high-field broken-symmetry states has mostly relied on macroscopic transport techniques, which lack spatial resolution. Here, we demonstrate a direct approach by imaging the QHIFM states at atomic scale with a scanning tunneling microscope. At half filling of the zero LL (nu = 0), the system is in a spin unpolarized state and we observe a linear magnetic-field-scaling of valley splitting. The wave functions of the QHIFM states at nu = 0 are directly imaged at the atomic scale and we observe an interaction-driven density wave featuring a Kekule distortion, which is responsible for the large gap in high magnetic fields. Moreover, our experiment demonstrates that both the valley and spin splittings depend on the filling factor. For example, the spin splitting in the zero LL is dramatically enhanced (in excess of about 200% at maximum) when the Fermi level lies inside spin-polarized states (at nu = 1 or -1), accounting for strong many-body effects.
机译:已经在石墨烯单层的“相对论”零朗道能级(LL)中预测了许多量子霍尔同位旋铁磁(QHIFM)状态。但是,这些高场破碎对称状态的识别主要依靠宏观的传输技术,而缺乏空间分辨率。在这里,我们通过使用扫描隧道显微镜在原子尺度上对QHIFM状态进行成像来展示一种直接方法。在零LL的一半填充(nu = 0)时,系统处于自旋非极化状态,并且我们观察到了谷值分裂的线性磁场缩放。 nu = 0处的QHIFM态的波函数直接在原子尺度上成像,我们观察到相互作用驱动的具有Kekule畸变的密度波,这是高磁场中大间隙的原因。此外,我们的实验表明,谷值分裂和自旋分裂都取决于填充因子。例如,当费米能级处于自旋极化态(在nu = 1或-1)内时,零LL中的自旋分裂显着增强(最大超过200%),这说明了强大的多体效应。

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  • 来源
    《Physical review 》 |2019年第8期| 085437.1-085437.6| 共6页
  • 作者单位

    Beijing Normal Univ Ctr Adv Quantum Studies Dept Phys Beijing 100875 Peoples R China;

    Beijing Normal Univ Ctr Adv Quantum Studies Dept Phys Beijing 100875 Peoples R China|Hunan Univ Sch Phys & Elect Changsha 410082 Hunan Peoples R China;

    Beijing Normal Univ Ctr Adv Quantum Studies Dept Phys Beijing 100875 Peoples R China|Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol State Key Lab Funct Mat Informat 865 Changning Rd Shanghai 200050 Peoples R China;

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