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首页> 外文期刊>Physical review. B, Condensed Matter And Materals Physics >High-pressure compressibility and electronic properties of bismuth silicate Bi_2SiO_5 from synchrotron experiments and first-principles calculations
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High-pressure compressibility and electronic properties of bismuth silicate Bi_2SiO_5 from synchrotron experiments and first-principles calculations

机译:同步加速器实验和第一性原理计算的硅酸铋Bi_2SiO_5的高压可压缩性和电子性能

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摘要

The high-pressure structural properties of bismuth oxide Bi2SiO5 have been investigated up to 29 GPa using in situ powder synchrotron x-ray diffraction (XRD) and up to 50 GPa with density functional theory (DFT) calculations. We found a compressibility anomaly at about 20 GPa that is observed both in our XRD and DFT results. The rotation of the corner-connected SiO4 tetrahedra produces a straightening of the silicate chains, yielding a lower compressibility above 20 GPa for the structure with straight chains. We analyzed the stereochemical activity of the Bi3+ lone electron pair, which is found to decrease with increasing pressure, but it can still be identified in the calculated electron density difference maps at 50 GPa.
机译:使用原位粉末同步加速器X射线衍射(XRD)和高达50 GPa的密度泛函理论(DFT)计算,研究了高达29 GPa的氧化铋Bi2SiO5的高压结构性能。我们在XRD和DFT结果中都发现了大约20 GPa的可压缩性异常。角连接的SiO4四面体的旋转产生硅酸盐链的拉直,对于具有直链的结构,在20 GPa以上产生较低的可压缩性。我们分析了Bi3 +孤电子对的立体化学活性,发现该立体对随压力的增加而降低,但仍可以在计算出的50 GPa的电子密度差图中找到它。

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  • 来源
    《Physical review. B, Condensed Matter And Materals Physics》 |2019年第6期|064116.1-064116.5|共5页
  • 作者单位

    Goethe Univ Frankfurt, Inst Geowissensch, Altenhoferallee 1, D-60438 Frankfurt, Germany;

    Goethe Univ Frankfurt, Inst Geowissensch, Altenhoferallee 1, D-60438 Frankfurt, Germany;

    Goethe Univ Frankfurt, Inst Geowissensch, Altenhoferallee 1, D-60438 Frankfurt, Germany;

    Nagoya Univ, Dept Phys, Nagoya, Aichi 4648602, Japan;

    Dassault Syst BIOVIA, Cambridge CB4 0WN, England;

    ESRF, 71 Ave Martyrs, F-38000 Grenoble, France;

    Goethe Univ Frankfurt, Inst Geowissensch, Altenhoferallee 1, D-60438 Frankfurt, Germany;

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