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Twisted skyrmions at domain boundaries and the method of image skyrmions

机译:区域边界上的扭曲的天空粒子和图像天空粒子的方法

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We predict a twisted skyrmion structure at the boundary of two antiparallel magnetic domains stabilized by a (synthetic or crystal) antiferromagnetic coupling on the border. Through this novel state, skyrmions with opposite polarities can be freely switched between each other by spin-polarized electric currents. We therefore propose the concept of double-track skyrmion racetrack memories and logic gates where the binary data are represented by skyrmions with different polarities. The dynamics of the skyrmion polarity reversal is theoretically studied. Using the method of image, we derive the analytical formula of the repulsive potential when a normal skyrmion approaches the domain boundary. A harmonic attractive potential is obtained for the twisted skyrmion across the border. Micromagnetic simulations compare well with analytical results. The method of image skyrmion proposed in this work can be used to deal with a large class of skyrmion-boundary interaction problems.
机译:我们预测在一个由(合成或晶体)反铁磁耦合在边界上稳定的两个反平行磁畴的边界处,扭曲的天胶离子结构。通过这种新颖的状态,具有相反极性的天体离子可以通过自旋极化电流在彼此之间自由切换。因此,我们提出了双轨skyrmion跑道存储器和逻辑门的概念,其中二进制数据由具有不同极性的skyrmion表示。从理论上研究了天蝎子极性反转的动力学。使用图像的方法,我们推导了正常天敌接近域边界时的排斥势的解析公式。跨边界扭曲的天rm获得了谐波吸引电势。微磁模拟与分析结果很好地比较。这项工作提出的图像skyrmion方法可用于处理一大类skyrmion边界相互作用问题。

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  • 来源
    《Physical review. B, Condensed Matter And Materals Physics》 |2018年第1期|014433.1-014433.16|共16页
  • 作者单位

    School of Electronic Science and Engineering and State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    School of Electronic Science and Engineering and State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    School of Electronic Science and Engineering and State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    School of Electronic Science and Engineering and State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    School of Electronic Science and Engineering and State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    School of Electronic Science and Engineering and State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

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