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首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Intrinsic phonon decoherence and quantum gates in coupled lateral quantum-dot charge qubits
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Intrinsic phonon decoherence and quantum gates in coupled lateral quantum-dot charge qubits

机译:耦合横向量子点电荷量子位中的本征声子退相干和量子门

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Recent experiments by [Hayashi et al., Phys. Rev. Lett. 91, 226804 (2003)] demonstrate coherent oscillations of a charge quantum bit in laterally defined quantum dots. We study the intrinsic electron-phonon decoherence and gate performance for the next step: a system of two coupled charge qubits. The effective decoherence model contains properties of local as well as collective decoherence. Decoherence channels can be classified by their multipole moments, which leads to different low-energy spectra. It is shown that due to the super-Ohmic spectrum, the gate quality is limited by the single-qubit Hadamard gates. It can be significantly improved, by using double dots with weak tunnel coupling.
机译:[Hayashi等人,Phys。牧师91,226804(2003)]展示了横向定义的量子点中电荷量子位的相干振荡。我们研究下一步的固有电子声子退相干和栅极性能:两个耦合电荷量子位的系统。有效的退相干模型包含局部和集体退相干的属性。退相干通道可以通过其多极矩来分类,从而导致不同的低能谱。结果表明,由于超欧姆谱,门的质量受到单量子位哈达玛门的限制。通过使用弱隧道耦合的双点可以显着改善它。

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