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首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Resonant electronic Raman scattering in a Van Vleck Ⅱ-Ⅵ diluted magnetic semiconductor: Cd_(1-x)Fe_xTe
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Resonant electronic Raman scattering in a Van Vleck Ⅱ-Ⅵ diluted magnetic semiconductor: Cd_(1-x)Fe_xTe

机译:Van VleckⅡ-Ⅵ稀磁半导体中的共振电子拉曼散射:Cd_(1-x)Fe_xTe

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摘要

The Van Vleck paramagnetism of Cd_(1-x)Fe_xTe, a diluted magnetic semiconductor, is explored with electronic Raman spectroscopy of an internal transition of Fe~(2+), on the one hand, and the spin-flip Raman scattering (SFRS) from donor-bound electrons, on the other. Zeeman splitting of the Raman transition from the nonmagnetic ground state to the first excited state displays patterns consistent with energy levels responsible for the Van Vleck paramagnetism. SFRS, in turn, delineates characteristic features of the Van Vleck magnetization, as expected from s-d exchange interaction. The combination of SFRS and magnetization measurements yielded the s-d exchange constant in Cd_(1-x)Fe_xTe, αN_0=244 ± 10 meV.
机译:一方面,利用电子拉曼光谱技术研究了Fe〜(2+)的内部跃迁,以及自旋翻转拉曼散射(SFRS),研究了稀释的磁性半导体Cd_(1-x)Fe_xTe的Van Vleck顺磁性)来自供体结合的电子。从非磁性基态到第一激发态的拉曼跃迁的塞曼分裂显示出与负责Van Vleck顺磁性的能级一致的模式。 SFRS依次描绘了s-d交换相互作用所期望的Van Vleck磁化特征。 SFRS和磁化测量的组合产生了Cd_(1-x)Fe_xTe的s-d交换常数,αN_0= 244±10 meV。

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