机译:In_(0.65)Al_(0.35)As / Al_(0.4)Ga_(0.6)As量子点阵列中的高温电子空穴液体和费米激子的动力学
State Key Laboratory of Optoelectronic Materials and Technologies, Zhongshan (Sun Yat-Sen) University, Guangzhou 510275, China;
III-V semiconductors; electron-hole drops and electron-hole plasma; time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter;
机译:生长和退火温度对In_(0.6)Al_(0.4)As / Al_(0.4)Ga_(0.6)As量子点结构和光学性质的影响
机译:从In_(0.53)Ga_(0.47)As / In_(0.53)Ga_(0.23)Al_(0.24)As量子阱到InAs / In_(0.53)Ga_(0.23)Al_(0.24)的激子和自由载流子的隧道注入量子破折号
机译:高功率高击穿δ掺杂In_(0.35)Al_(0.65)As / In_(0.35)Ga_(0.65)As变质HEMT
机译:1.5μm范围自组织IN_(0.65)GA_(0.35)AS / IN_(0.52)AL_(0.48),作为通过分子束外延在(775)面向的INP基材上生长的量子线结构
机译:两种声子模三元合金中的电子 - 声子耦合 $ al_ {0.25} In_ {0.75} as / Ga_ {0.25} In_ {0.75} as量子井