Influence of band structure effects on domain-wall resistance in diluted ferromagnetic semiconductors

摘要

Intrinsic domain-wall resistance (DWR) in (Ga,Mn)As is studied theoretically and compared to experimental results. The recently developed model of spin transport in diluted ferromagnetic semiconductors [Van Dorpe et al., Phys. Rev. B 72, 205322 (2005)] is employed. The model combines the disorder-free Landauer-Buettiker formalism with the tight-binding description of the host band structure. The obtained results show how much the spherical 4 X 4 kp model [Nguyen, Shchelushkin, and Brataas, Phys. Rev. Lett. 97, 136603 (2006)] overestimates DWR in the adiabatic limit, and reveal the dependence of DWR on the magnetization profile and crystallographic orientation of the wall.