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Significant negative differential resistance predicted in scanning tunneling spectroscopy for a C_(60) monolayer on a metal surface

机译:在扫描隧穿光谱法中预测的金属表面C_(60)单层的显着负负电阻

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摘要

We theoretically predict the occurrence of negative differential resistance (NDR) in scanning tunneling spectroscopy for a pure C_(60) monolayer deposited on a metal surface using metal tips, namely, on a Cu(111) surface and using various W tips. It is proposed that the likely reason why NDR has not been observed under such conditions is that NDR can be reduced if an oxidized or Cu-terminated tip is used. A detailed decomposition of the total tunneling current into its contributions from individual molecular orbitals reveals that only some of the orbitals on the tip and on the C_(60) can be "matched up'' to give a contribution to the current and that the NDR is a consequence of the mismatch between these specific orbitals within particular ranges of bias voltage. Moreover, the NDR characteristics, including the peak positions and the peak-to-valley ratios, are found to depend on the tip material, tip geometry, and tip-to-molecule position.
机译:我们从理论上预测使用金属尖端(即在Cu(111)表面和使用各种W尖端)沉积在金属表面上的纯C_(60)单层的扫描隧穿光谱法中会出现负微分电阻(NDR)。建议在这种条件下未观察到NDR的可能原因是,如果使用氧化的或Cu末端的末端,则可以还原NDR。将总隧穿电流分解为单个分子轨道的贡献的详细分解表明,只有尖端和C_(60)上的一些轨道可以“匹配”以对电流做出贡献,并且NDR这是由于在特定的偏置电压范围内这些特定轨道之间不匹配的结果,此外,发现NDR特性(包括峰位置和峰谷比)取决于尖端材料,尖端几何形状和尖端-分子位置。

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  • 来源
    《Physical review》 |2009年第7期|075403.1-075403.6|共6页
  • 作者单位

    Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong, SAR, China;

    Center for Conaensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan;

    Center for Conaensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan;

    ICMM-CSIC, Cantohlanco, 28049 Madrid, Spain;

    Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong, SAR, China;

    Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong, SAR, China Laboratoire de Chimie Theorique, UMR76I6, Universite P. et M. Curie-Paris 6, 4 Place Jussieu case 137, 75252 Paris Cede.x 05, France;

    Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong, SAR, China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    molecular electronic devices; fullerenes and related materials; scanning tunneling microscopy (including chemistry induced with STM);

    机译:分子电子器件富勒烯及相关物质;扫描隧道显微镜(包括用STM诱导的化学反应);

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