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High-pressure synthesis of the indirectly electron-doped iron pnictide superconductor Sr_(1-X)La_xFe_2As_2 with maximum T_c=22 K

机译:高压合成最大电子T_c = 22 K的间接电子掺杂的铁锡超导体Sr_(1-X)La_xFe_2As_2

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摘要

Compounds of Sr_(1-X)La_xFe_2As_2 were synthesized by solid-state reaction at 1273 K, under pressures of 2 or 3 GPa. The Sr_(1-X)La_xFe_2As_2 phase was dominant up to x=0.5 and superconductivity was observed at x≥0.2. A maximum critical temperature T_c of 22 K and a maximum shielding volume fraction of ~70% were obtained at x=0.4. This is the first experimental demonstration of electron-doped superconductivity in 122-type iron pnictides, where electrons were doped through aliovalent substitution at the site of the alkaline-earth metal. The optimal T_c was slightly higher than that for the Co-doped (directly electron-doped) samples (19 K) and much lower than that for the hole-doped case (37 K). The bulk superconductivity range was narrower than that for the Co-substituted case and both ranges were much narrower than that for the hole-doped case. These observations revealed that differences in the electron-doping mode (direct or indirect) did not have a prominent effect on the optimal T_c or superconductivity range, compared with differences in carrier polarity.
机译:Sr_(1-X)La_xFe_2As_2的化合物是在2 GPa或3 GPa的压力下于1273 K下通过固相反应合成的。 Sr_(1-X)La_xFe_2As_2相占主导地位,直至x = 0.5,并且在x≥0.2时观察到超导性。在x = 0.4时获得的最大临界温度T_c为22 K,最大屏蔽体积分数为〜70%。这是在122型铁素体中电子掺杂的超导性的第一个实验证明,其中电子通过碱土金属位点的异价取代被掺杂。最佳T_c略高于Co掺杂(直接电子掺杂)样品的最佳T_c(19 K),远低于空穴掺杂样品的最佳T_c(37 K)。体超导范围比共取代的情况窄,并且两个范围都比空穴掺杂的情况窄。这些观察结果表明,与载流子极性的差异相比,电子掺杂方式的差异(直接或间接)对最佳T_c或超导范围没有显着影响。

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  • 来源
    《Physical review》 |2010年第18期|p.180512.1-180512.4|共4页
  • 作者单位

    Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan;

    Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan;

    Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan;

    Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan;

    Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan;

    Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan,Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan;

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  • 正文语种 eng
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  • 关键词

    effects of material synthesis; crystal structure; and chemical composition;

    机译:材料合成的影响;晶体结构和化学成分;

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