机译:高压合成最大电子T_c = 22 K的间接电子掺杂的铁锡超导体Sr_(1-X)La_xFe_2As_2
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan;
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan;
Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan;
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan;
Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan;
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan,Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan;
effects of material synthesis; crystal structure; and chemical composition;
机译:电子掺杂无限高T_c超导体Sr_(0.9)La_(0.1)CuO_2(T_c = 42 K)中的超导性和自旋
机译:费米表面拓扑对电子掺杂的Ba(Fe_(1-x)Co_x)_2As_2的超导状态的重要性
机译:Bechgaard盐中的线性电阻率与T_c和肽型超导体Ba(Fe_(1-x)Co_x)_2As_2的相关性
机译:传输属性的临界缩放在铁预防超导k_xsr_(1-x)fe_2as_2和k_xba_(1-x)fe_2as_2中的k_xsr_(1-x)fe_2as_2
机译:用于超导装置的聚焦HE +离子束照射的铁预态和MGB2薄膜的修饰
机译:锡铁超导体中的向列超导态
机译:高压合成间接电子掺杂122铁 超导体sr1-xLaxFe2as2,最大Tc = 22K