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Atomistic pseudopotential theory of spin relaxation in self-assembled In_(1-x)Ga_xAs/GaAs quantum dots at zero magnetic field

机译:自组装In_(1-x)Ga_xAs / GaAs量子点在零磁场下自旋弛豫的原子伪势理论

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摘要

An atomistic pseudopotential calculation of the spin-flip time (T_1) of electrons and holes mediated by acoustic phonons in self-assembled In_(1-x)Ga_x As/GaAs quantum dots at zero magnetic field is presented. At low magnetic field, the first-order process is suppressed, and the second-order process becomes dominant. It is found that the spin-phonon-interaction-induced spin relaxation time is 100-221 s for electrons, and 4.4-60 ms for holes at 4.2 K. The calculated hole-spin relaxation times are in good agreement with recent experiments, which suggests that the two-phonon process is one of the main relaxation mechanisms for hole-spin relaxation in the self-assembled quantum dots at zero field. The structural and alloy composition effects on the spin relaxation in the quantum dots are clarified.
机译:提出了在零磁场下自组装In_(1-x)Ga_x As / GaAs量子点中声子介导的电子和空穴的自旋翻转时间(T_1)的原子pseudo势计算。在低磁场下,一阶过程被抑制,而二阶过程成为主导。发现自旋-声子相互作用引起的电子自旋弛豫时间为100-221 s,在4.2 K下空穴的自旋弛豫时间为4.4-60 ms。计算的空穴自旋弛豫时间与最近的实验吻合良好,这表明,双声子过程是零场自组装量子点中空穴自旋弛豫的主要弛豫机制之一。阐明了结构和合金成分对量子点中自旋弛豫的影响。

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  • 来源
    《Physical review》 |2012年第4期|p.045317.1-045317.5|共5页
  • 作者单位

    Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, People's Republic of China;

    Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, People's Republic of China;

    Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, People's Republic of China;

    Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, People's Republic of China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    quantum dots; spin relaxation and scattering; spin-orbit coupling, zeeman and stark splitting, jahn-teller effect;

    机译:量子点;自旋弛豫和散射;自旋轨道耦合;塞曼和斯塔克分裂;詹-泰勒效应;

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