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首页> 外文期刊>Physical review >Ab initio study of Z_2 topological phases in perovskite (111) (SrTiO_3)_7/(SrIrO_3)_2 and (KTaO_3)_7/(KPtO_3)_2 multilayers
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Ab initio study of Z_2 topological phases in perovskite (111) (SrTiO_3)_7/(SrIrO_3)_2 and (KTaO_3)_7/(KPtO_3)_2 multilayers

机译:钙钛矿(111)(SrTiO_3)_7 /(SrIrO_3)_2和(KTaO_3)_7 /(KPtO_3)_2多层膜中Z_2拓扑相的从头算研究

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摘要

Honeycomb structures formed by the growth of perovskite 5d transition metal oxide heterostructures along the (111) direction in a t_(2g)~5 configuration can give rise to topological ground states characterized by a topological index v = 1, as reported by Xiao et al. [Nat. Commun. 2, 596 (2011)]. Using a combination of a tight binding model and ab initio calculations we study the multilayers (SrTiO_3)_7/(SrIrO_3)_2 and (KTaO_3)_7/(KPtO_3)_2 as a function of parity asymmetry, on-site interaction U, and uniaxial strain and determine the nature and evolution of the gap. According to our density functional theory calculations, (SrTiO_3)_7/(SrIrO_3)_2 is found to be a topological semimetal whereas (KTaO_3)_7/(KPtO_3)_2 is found to present a topological insulating phase that can be understood as the high U limit of the previous one, that can be driven to a trivial insulating phase by a perpendicular external electric field.
机译:由Xiao等人报道,由钙钛矿5d过渡金属氧化物异质结构沿t_(2g)〜5构型沿(111)方向生长而形成的蜂窝结构可产生以拓扑指数v = 1为特征的拓扑基态。 。 [Nat。公社2,596(2011)]。使用紧密结合模型和从头算的组合,我们研究了多层(SrTiO_3)_7 /(SrIrO_3)_2和(KTaO_3)_7 /(KPtO_3)_2作为奇偶不对称,现场相互作用U和单轴的函数紧张并确定差距的性质和演变。根据我们的密度泛函理论计算,发现(SrTiO_3)_7 /(SrIrO_3)_2是拓扑半金属,而(KTaO_3)_7 /(KPtO_3)_2被发现具有拓扑绝缘相,可以理解为高U前一个极限,可以通过垂直的外部电场驱动到琐碎的绝缘相。

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  • 来源
    《Physical review》 |2013年第15期|155119.1-155119.10|共10页
  • 作者单位

    Departamento de Fisica Aplicada, Universidade de Santiago de Compostela, E-15782 Santiago de Compostela, Spain and Institute de Investigations Tecnoloxicas, Universidade de Santiago de Compostela, E-15782 Santiago de Compostela, Spain;

    Departamento de Fisica Aplicada, Universidade de Santiago de Compostela, E-15782 Santiago de Compostela, Spain and Institute de Investigations Tecnoloxicas, Universidade de Santiago de Compostela, E-15782 Santiago de Compostela, Spain;

    Departamento de Fisica Aplicada, Universidade de Santiago de Compostela, E-15782 Santiago de Compostela, Spain and Institute de Investigations Tecnoloxicas, Universidade de Santiago de Compostela, E-15782 Santiago de Compostela, Spain;

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  • 正文语种 eng
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  • 关键词

    surface states, band structure, electron density of states; theory and modeling; metalinsulator transitions and other electronic transitions; quantum phase transitions;

    机译:表面态;能带结构;态电子密度;理论与建模;金属绝缘体过渡和其他电子过渡;量子相变;

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