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机译:微观结构对高均匀度In_(1-x)Ga_xAs纳米线阵列中光学特性的作用:纤锌矿带隙更宽的证据
Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universitaet Muenchen,Garching, 85748, Germany;
Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universitaet Muenchen,Garching, 85748, Germany,Institute for Advanced Study, Technische Universitaet Muenchen, Garching, 85748, Germany;
Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universitaet Muenchen,Garching, 85748, Germany;
Department of Chemistry, Ludwig-Maximilians- Universitaet Muenchen, Munich, 81377, Germany;
Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universitaet Muenchen,Garching, 85748, Germany;
Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universitaet Muenchen,Garching, 85748, Germany;
Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universitaet Muenchen,Garching, 85748, Germany;
Institute for Nanoelectronics, Technische Universitaet Muenchen, Munich, 80333, Germany;
Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universitaet Muenchen,Garching, 85748, Germany;
Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universitaet Muenchen,Garching, 85748, Germany;
Institute for Nanoelectronics, Technische Universitaet Muenchen, Munich, 80333, Germany;
Institute for Nanoelectronics, Technische Universitaet Muenchen, Munich, 80333, Germany;
Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universitaet Muenchen,Garching, 85748, Germany,Institute for Advanced Study, Technische Universitaet Muenchen, Garching, 85748, Germany;
Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universitaet Muenchen,Garching, 85748, Germany;
Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universitaet Muenchen,Garching, 85748, Germany,Institute for Advanced Study, Technische Universitaet Muenchen, Garching, 85748, Germany;
Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universitaet Muenchen,Garching, 85748, Germany;
机译:使用数字合金的高拉伸应变In_(1-x)Ga_xAs / In_(0.52)(Ga_(0.4)Al_(0.6))_(0.48)As多量子阱的MBE生长和光学性质
机译:宽带隙贫CuIn_(1-x)Ga_xSe_2中宽带锡的修饰锡矿晶体结构的证据:对光学性能的影响
机译:用于气体传感应用的新型高迁移率In_(1-x)Ga_xAs圆柱栅纳米线FET具有增强的灵敏度
机译:间隔对IN_(1-X)GA_XAS / INAS / IN_(1-Y)AL_YAS量子的光电性质的影响
机译:宽带隙单倍铜矿三元合金MBE种植的MGZNO薄膜
机译:直接带隙纤锌矿磷化镓纳米线
机译:纤锌矿GaP纳米线的能带结构的光学研究