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机译:一维半导体(NbSe_4)_3I中低温有序的静态和动态特性
Institute of Physics, Bijenicka c. 46,10000 Zagreb, Croatia and Institute of Physics, Johannes Gutenberg-University, 55099 Mainz, Germany;
Institute of Physics, Bijenicka c. 46,10000 Zagreb, Croatia;
Institute of Physics, Bijenicka c. 46,10000 Zagreb, Croatia;
Institute of Physics, Bijenicka c. 46,10000 Zagreb, Croatia;
Institute of Physics, Bijenicka c. 46,10000 Zagreb, Croatia;
Center of Excellence for Advanced Materials and Sensing Devices, Ruder Boskovic Institute, Bijenicka c. 54, 10000 Zagreb, Croatia;
Center of Excellence for Advanced Materials and Sensing Devices, Ruder Boskovic Institute, Bijenicka c. 54, 10000 Zagreb, Croatia;
Institut Neel, CNRS-UJF, 38042 Grenoble, France;
Institute of Physics, Johannes Gutenberg-University, 55099 Mainz, Germany;
机译:一维电荷有序半导体(NbSe_4)_3I中的巨介电响应
机译:一维半导体(NbSe4)(3)I中低温有序的静态和动态特性
机译:一维半导体(NbSe4)(3)I中低温有序的静态和动态特性(vol 94,104113,2016)
机译:纳米磁珠一维线性链的静态和动态特性
机译:一维半导体中新型结的光电性能。
机译:II–V族半导体的一维纳米结构和器件
机译:稀释剂静态和动态性质的微观研究 一维软玻色子
机译:一维极化子带的低温特性。 I.极端窄带政权。