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Density of states in gapped superconductors with pairing-potential impurities

机译:带配对势杂质的带隙超导体的态密度

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We study the density of states in disordered s-wave superconductors with a small gap anisotropy. We consider disorder in the form of common nonmagnetic scatterers and pairing-potential impurities, which interact with electrons via an electric potential and a local distortion of the superconducting gap. Using quasiclassical Green functions, we determine the bound-state spectrum at a single impurity and the density of states at a finite concentration of impurities. We show that, if the gap is isotropic, an isolated impurity with suppressed pairing supports an infinite number of Andreev states. With growing impurity concentration, the energy-dependent density of states evolves from a sharp gap edge with an impurity band below it to a smeared BCS singularity in the so-called universal limit. Within one spin sector, pairing-potential impurities and weak spin-polarized magnetic impurities have essentially the same effect on the density of states. We note that, if a gap anisotropy is present, the density of states becomes sensitive to ordinary potential disorder, and the existence of Andreev states localized at pairing-potential impurities requires special conditions. An unusual feature related to the anisotropy is a nonmonotonic dependence of the gap edge smearing on impurity concentration.
机译:我们研究了具有小间隙各向异性的无序s波超导体中的状态密度。我们以常见的非磁性散射体和配对电位杂质的形式来考虑无序,它们通过电势和超导间隙的局部畸变与电子相互作用。使用准经典格林函数,我们可以确定单个杂质的结合态光谱和有限浓度的杂质的态密度。我们证明,如果间隙是各向同性的,则配对被抑制的孤立杂质将支持无数的Andreev态。随着杂质浓度的增加,与能量有关的状态密度从具有低于其杂质带的尖锐间隙边缘演变为所谓的通用极限中模糊的BCS奇点。在一个自旋扇区内,成对电位杂质和弱自旋极化的磁性杂质对态密度的影响基本相同。我们注意到,如果存在间隙各向异性,则态的密度对普通的势垒变得敏感,并且位于配对电位杂质中的安德列夫态的存在需要特殊条件。与各向异性有关的一个不寻常的特征是,间隙边缘拖尾对杂质浓度的非单调依赖性。

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  • 来源
    《Physical review. B, Condensed Matter And Materals Physics》 |2016年第10期|104521.1-104521.17|共17页
  • 作者单位

    Univ. Grenoble Alpes, INAC-PHELIQS, F-38000 Grenoble, France and CEA, INAC-PHELIQS, F-38000 Grenoble, France ,Institute for Physics of Microstructures, Russian Academy of Sciences, 603950 Nizhny Novgorod, GSP-105, Russia;

    Univ. Grenoble Alpes, INAC-PHELIQS, F-38000 Grenoble, France and CEA, INAC-PHELIQS, F-38000 Grenoble, France;

    Univ. Grenoble Alpes, INAC-PHELIQS, F-38000 Grenoble, France and CEA, INAC-PHELIQS, F-38000 Grenoble, France;

    Kavli Institute of NanoScience, Delft University of Technology, Lorentzweg 1, NL-2628 CJ, Delft, The Netherlands;

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