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Impurity-induced magnetic droplet in unconventional superconductors near a magnetic instability: Application to Nd-doped CeCoIn_5

机译:磁不稳定附近非常规超导体中的杂质诱导磁滴:在掺钕CeCoIn_5中的应用

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摘要

Beside the spin density wave (SDW) order inside the superconducting phase in CeCoIn_5 at high magnetic fields, recent neutron scattering measurements have found Bragg peaks in 5% Nd-doped CeCoIn_5 at low fields. The intensity of Bragg peaks in low fields is suppressed by increasing field. Based on the phenomenological and microscopic modeling, we show that for the Pauli limited d-wave superconductors in the vicinity of SDW instability relevant for CeCoIn_5, magnetic impurities locally induce droplets of SDW order. Because of the strong anisotropy in the momentum space in the spin fluctuations guaranteed by the d-wave pairing symmetry, sharp peaks in spin structure factor at Qs are produced by the impurities, even when the droplets of SDW do not order. At zero field, the Nd impurity spins are along the c axis due to the coupling to the conduction electrons with an easy c axis, besides their own crystal field effect. The in-plane magnetic field cants the impurity moments toward the ab plane, which suppress the droplets of SDW order. At high fields, the long-range SDW inside the superconducting phase is stabilized as a consequence of magnon condensation. Our results are consistent with the recent neutron scattering and thermal conductivity measurements.
机译:除了在高磁场下CeCoIn_5的超导相内部的自旋密度波(SDW)阶数外,最近的中子散射测量还发现低磁场下5%掺Nd的CeCoIn_5的布拉格峰。低场的布拉格峰强度通过增加场来抑制。基于现象学和微观模型,我们表明,对于与CeCoIn_5相关的SDW不稳定性附近的Pauli有限d波超导体,磁性杂质会局部诱导SDW有序液滴。由于由d波成对对称性保证的自旋涨落中动量空间中的强各向异性,即使SDW的液滴不规则,杂质也会在Qs处产生自旋结构因子的尖峰。在零场时,由于Nd杂质除了具有自己的晶体场效应外,由于与具有易c轴的传导电子的耦合而沿c轴自旋。面内磁场使杂质矩向ab平面倾斜,从而抑制了SDW阶滴。在高场,由于磁振子凝结,超导相内部的远程SDW稳定。我们的结果与最近的中子散射和热导率测量结果一致。

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  • 来源
    《Physical review》 |2017年第22期|224502.1-224502.7|共7页
  • 作者

    Shi-Zeng Lin; Jian-Xin Zhu;

  • 作者单位

    Theoretical Division, T-4 and CNLS, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA;

    Theoretical Division and Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA;

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