机译:在天然碳化硅中将电子自旋相干锁定在20 ms以上
Experimental Physics VI, Julius-Maximilian University of Wuerzburg, 97074 Wuerzburg, Germany;
Experimental Physics VI, Julius-Maximilian University of Wuerzburg, 97074 Wuerzburg, Germany,National Institutes for Quantum and Radiological Science and Technology, Takasaki, Gunma 370-1292, Japan;
Experimental Physics VI, Julius-Maximilian University of Wuerzburg, 97074 Wuerzburg, Germany;
National Institutes for Quantum and Radiological Science and Technology, Takasaki, Gunma 370-1292, Japan;
Experimental Physics VI, Julius-Maximilian University of Wuerzburg, 97074 Wuerzburg, Germany;
Experimental Physics VI, Julius-Maximilian University of Wuerzburg, 97074 Wuerzburg, Germany,Bavarian Center for Applied Energy Research (ZAE Bayern), 97074 Wuerzburg, Germany;
机译:在天然碳化硅中锁定20毫秒以上的电子旋转相干性
机译:孤立的电子在碳化硅中以毫秒相干时间自旋
机译:薄碳化硅中20-800 MeV电子的平面沟道辐射
机译:通过Overhauser场的CPT锁定扩展量子点中电子自旋相干性
机译:碳化硅驱动旋转的相干性与耦合
机译:通过第一原理计算的富硅碳化硅材料的晶体结构和电子性能
机译:在自然界中锁定电子自旋相干超过50毫秒 碳化硅