Demonstration of a 1/4-Cycle Phase Shift in the Radiation-Induced Oscillatory Magnetoresistance in GaAs/AlGaAs Devices

摘要

We examine the phase and the period of the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices utilizing in situ magnetic field calibration by electron spin resonance of diphenyl-picryl-hydrazal. The results confirm a f-independent 1/4-cycle phase shift with respect to the h f = jhω_c condition for j ≥ 1, and they also suggest a small ( ≈ 2%) reduction in the effective mass ratio, m~*/m, with respect to the standard value for GaAs/AlGaAs devices.