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首页> 外文期刊>Physical review letters >Electronic Structures and Magnetic Order of Ordered-Fe-Vacancy Ternary Iron Selenides TIFe_(1.5)Se_2 and AFe_(1.5)Se_2 (A = K, Rb, or Cs)
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Electronic Structures and Magnetic Order of Ordered-Fe-Vacancy Ternary Iron Selenides TIFe_(1.5)Se_2 and AFe_(1.5)Se_2 (A = K, Rb, or Cs)

机译:有序铁空位三价硒化铁TIFe_(1.5)Se_2和AFe_(1.5)Se_2的电子结构和磁阶(A = K,Rb或Cs)

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摘要

By the first-principles electronic structure calculations, we find that the ground state of the Fe-vacancies ordered TIFe_(1.5)Se_2 is a quasi-two-dimensional collinear antiferromagnetic semiconductor with an energy gap of 94 meV, in agreement with experimental measurements. This antiferromagnetic order is driven by the Se-bridged antiferromagnetic superexchange interactions between Fe moments. Similarly, we find that crystals AFe_(1.5)Se_2 (A = K, Rb, or Cs) are also antiferromagnetic semiconductors but with a zero-gap semiconducting state or semimetallic state nearly degenerated with the ground states. Thus, rich physical properties and phase diagrams are expected.
机译:通过第一性原理电子结构计算,我们发现有序排列的TiFe_(1.5)Se_2的Fe空位的基态是准二维共线反铁磁半导体,其能隙为94 meV,与实验测量结果一致。 Fe矩之间的Se桥反铁磁超交换相互作用驱动该反铁磁顺序。类似地,我们发现晶体AFe_(1.5)Se_2(A = K,Rb或Cs)也是反铁磁半导体,但具有零能隙半导体状态或半金属态,几乎与基态退化。因此,期望有丰富的物理性质和相图。

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