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Atomic Structure of Highly Strained BiFeO_3 Thin Films

机译:高应变BiFeO_3薄膜的原子结构

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摘要

We determine the atomic structure of the pseudotetragonal T phase and the pseudorhombohedral R phase in highly strained multiferroic BiFeO_3 thin films by using a combination of atomic-resolution scanning transmission electron microscopy and electron energy-loss spectroscopy. The coordination of the Fe atoms and their displacement relative to the O and Bi positions are assessed by direct imaging. These observations allow us to interpret the electronic structure data derived from electron energy-loss spectroscopy and provide evidence for the giant spontaneous polarization in strained BiFeO_3 thin films.
机译:我们结合原子分辨率扫描透射电子显微镜和电子能量损失谱,确定了高应变多铁性BiFeO_3薄膜中伪四方T相和伪菱形R相的原子结构。通过直接成像评估Fe原子的配位及其相对于O和Bi位置的位移。这些观察结果使我们能够解释从电子能量损失谱得出的电子结构数据,并为应变的BiFeO_3薄膜中巨大的自发极化提供证据。

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  • 来源
    《Physical review letters》 |2012年第4期|p.047601.1-047601.5|共5页
  • 作者单位

    Electron Microscopy Center, Empa, Swiss Federal Laboratories for Materials Science and Technology,CH-8600 Duebendorf, Switzerland,Department of Materials, ETH Zurich, CH-8093 Zurich, Switzerland;

    Electron Microscopy Center, Empa, Swiss Federal Laboratories for Materials Science and Technology,CH-8600 Duebendorf, Switzerland;

    Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA,Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA;

    Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA,Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA;

    Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA;

    Department of Physics, University of California, Berkeley, California 94720, USA;

    Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA,Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA;

    Department of Physics, University of California, Berkeley, California 94720, USA,Materials Sciences Division, Lawrence Berkeley National Laboratory, California 94720, USA,Department of Material Science and Engineering, University of California, Berkeley, California 94720, USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    microscopy of surfaces, interfaces, and thin films; strain-induced piezoelectric fields; electron energy loss spectroscopy;

    机译:表面;界面和薄膜的显微镜检查;应变感应压电场;电子能量损失谱;

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