Angular dispersion of photons and phonons in a photonic crystal of selectively grown GaN pyramids containing an In_xGa_(1-x)N quantum well structure

摘要

Angular-dependent reflection measurements were used to map out the dispersion relations of the resonant Bloch modes, and the angular dispersion of the phonon modes, in a photonic crystal consisting of selectively grown GaN pyramids containing a single In_xGa_(1-x)N/GaN quantum well. The dispersion of the photons exhibits strong photonic crystal characteristics, while the mean indium content of the ～2 nm thickness In_xGa_(1-x)N layer was extracted from the angular dispersion of the phonon modes.