Combined double- and triple-crystal X-ray diffractometry with account for real defect structures in all crystals of X-ray optical schemes

摘要

Analytical expressions for coherent and diffuse scattering intensities with account for imperfections in all the crystals of double- and triple-crystal diffractometers (DCD and TCD) have been derived from the generalized dynamical theory of X-ray scattering in real single crystals which contain microdefects of various types. The analysis of TCD and DCD profiles measured from Czochralski-grown silicon single crystal with oxygen precipitates and dislocation loops has been carried out. Characteristics of defect structures in sample and monochromator have been determined by using the combined DCD+TCD method.