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机译:InGaN / GaN MQW选择性生长对半极性和非极性GaN条带的横向气相扩散的影响
Department of Electronics and Akasaki Research Center, Nagoya University, C3-1, Furo-cho, Chikusa-ku, Nagoya,Aichi 464-8603, Japan;
Department of Electronics and Akasaki Research Center, Nagoya University, C3-1, Furo-cho, Chikusa-ku, Nagoya,Aichi 464-8603, Japan;
Department of Electronics and Akasaki Research Center, Nagoya University, C3-1, Furo-cho, Chikusa-ku, Nagoya,Aichi 464-8603, Japan;
Department of Electronics and Akasaki Research Center, Nagoya University, C3-1, Furo-cho, Chikusa-ku, Nagoya,Aichi 464-8603, Japan;
机译:气相扩散在InGaN / GaN MQWs选择性区域MOVPE中的作用
机译:非极性和半极性InGaN / GaN多量子阱有源区的选择性可控横向光电化学蚀刻
机译:基于基于气相扩散的选择性区域锥体生长的半极性平面InGaN / GaN MQW的连续波长调制
机译:绿色发射半极性{1011} Ingan / GaN MQWS在GaN Nanopylamid阵列上选择的制造和光学性质
机译:发射蓝光的InGaN / GaN MQW中不均匀性的光学表征。
机译:InGaN / GaN-MQW太阳能电池电子和电气特性的数值建模
机译:通过选择性金属有机气相外延,Mg-Enviant of Patched GaN / Sapphire底物上的GaN的横向过度生长