机译:退火后溅射Cr掺杂In_2O_3薄膜的铁磁性
Department of Electrical and Computer Engineering, Center for Electromagnetic Materials and Optical Systems, University of Massachusetts, Lowell, Massachusetts 01854, USA;
Department of Electrical and Computer Engineering, Center for Electromagnetic Materials and Optical Systems, University of Massachusetts, Lowell, Massachusetts 01854, USA;
Department of Physics, University of Massachusetts, Lowell, Massachusetts 01854, USA;
Department of Electrical and Computer Engineering, Center for Electromagnetic Materials and Optical Systems, University of Massachusetts, Lowell, Massachusetts 01854, USA;
annealing; ferromagnetic properties; In_2O_3; oxygen deficiency; sputtering; thin films;
机译:载流子和自旋在掺杂Mn和Cr的In_2O_3薄膜中调节铁磁性中的作用
机译:薄膜和块状样品的高真空退火条件下,Cr掺杂的In_2O_3中的室温铁磁性
机译:氧气生长压力对激光烧蚀Cr掺杂In_2O_3薄膜的影响
机译:薄膜和散装样品的高真空退火的Cr-掺杂IN_2O_3中的室温铁磁性
机译:使用不平衡磁控溅射制造适用于薄膜晶体管的掺镓ZNO薄膜。
机译:自旋电子应用中通过共溅射制备的Co掺杂TiO2柔性薄膜的类铁磁行为
机译:CR掺杂TiO 2 sub>通过磁控杂交工艺制备的薄膜:光催化应用