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首页> 外文期刊>Physica status solidi >Temperature dependence of the off-diagonal magnetoimpedance in sensor configuration utilizing Co-rich amorphous wires
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Temperature dependence of the off-diagonal magnetoimpedance in sensor configuration utilizing Co-rich amorphous wires

机译:利用富含钴的非晶线在传感器配置中对角线对磁阻抗的温度依赖性

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摘要

For sensor operation, the temperature stability is of primary importance. In this work, we have investigated the temperature dependence of the magnetoimpedance (MI) in glass-coated Co-based amorphous wires which are widely used as MI sensing elements. The magnetic alloy has high Curie and crystallization temperatures, yet, the MI change at moderate temperatures of 20-90 ℃ and low-magnetic fields can be about 100%. This is explained by high-temperature sensitivity of the residual stress due to fast solidification and the difference in thermal expansion coefficients of glass and metal. To reduce the temperature effect, annealing treatment was proposed and applied to the whole sensing element in off-diagonal configuration comprising the MI wire and detection coil. Annealing treatment at a temperature of 160 ℃ during 2-3 rnin makes it possible to significantly improve both the magnetic field sensitivity and temperature stability. After annealing, the output voltage sensitivity in the linear region (±0.7 Oe) increases more than 2.5 times and shows little variations with temperature up to 90 ℃. For higher magnetic fields, the MI profile still shows noticeable change with temperature: the maximum of the output voltage decreases at a rate of about 0.15%/℃ as the temperature is increased. After optimum annealing, the MI curves become almost symmetrical suggesting that a well-defined circumferential anisotropy is established.
机译:对于传感器操作,温度稳定性至关重要。在这项工作中,我们研究了广泛用作MI传感元件的玻璃涂层Co基非晶导线中磁阻(MI)的温度依赖性。磁性合金具有较高的居里温度和结晶温度,但在20-90℃的中等温度下MI的变化和低磁场可以达到100%左右。这是由于快速固化引起的残余应力的高温敏感性以及玻璃和金属的热膨胀系数差异引起的。为了降低温度影响,提出了退火处理并将其应用于包括MI导线和检测线圈的非对角线构造的整个传感元件。在2-3分钟的时间内,在160℃的温度下进行退火处理可以显着提高磁场灵敏度和温度稳定性。退火后,线性区域(±0.7 Oe)的输出电压灵敏度增加了2.5倍以上,并且在高达90℃的温度下几乎没有变化。对于更高的磁场,MI曲线仍然显示出随温度的明显变化:随着温度的升高,输出电压的最大值以约0.15%/℃的速率降低。经过最佳退火后,MI曲线几乎变得对称,这表明建立了明确定义的周向各向异性。

著录项

  • 来源
    《Physica status solidi》 |2016年第2期|372-376|共5页
  • 作者单位

    National University of Science and Technology, MISIS, Leninskiy Av. 4, 119991 Moscow, Russia;

    National University of Science and Technology, MISIS, Leninskiy Av. 4, 119991 Moscow, Russia;

    National University of Science and Technology, MISIS, Leninskiy Av. 4, 119991 Moscow, Russia,Institute for Design Problems in Microelectronics, RAS, Sovetskaya Str. 3, 124681 Zelenograd, Moscow, Russia;

    National University of Science and Technology, MISIS, Leninskiy Av. 4, 119991 Moscow, Russia;

    Dpto. Fisica de Materiales, Facultad de Quimica, UPV/EHU, 1072, 20080 San Sebastian, Spain;

    Zhejiang University, 38 Zheda Road, Hangzhou 310027, P.R. China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    annealing; cobalt; magnetic sensors; magnetoimpedance; microwires; stress;

    机译:退火;钴;磁传感器磁阻抗微丝;强调;

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