Observation of high Q resonant modes in optically pumped GaN/InGaN microdisks fabricated using photoelectrochemical etching

摘要

Ⅲ-nitride microdisks with InGaN multiple quantum well active regions were fabricated using photoelectrochemical etching. The microdisks were thin, mushroom-shaped devices with smooth undercut surfaces. High quality optical modes were observed. A focused ion beam was used to further polish the microdisk sidewalls, as well as to study the effect of ion damage to the gain region of the microdisk.