Growth, structural and optical studies of CdSe/ZnSe nanostructures grown by MBE on GaAs and Si substrates

摘要

Structural (XRD and HRTEM) and optical properties of self-assembled CdSe quantum dots with ZnSe barriers have been grown by molecular beam epitaxy on GaAs and Si/Ge substrates. The results of XRD and HRTEM measurements showed that high-quality CdSe QD arrays embedded in ZnSe barriers could be grown on Si/Ge virtual substrates. It has been shown, that QD structures grown on different substrates exhibit comparable high luminescence efficiency at low temperatures. Two peaks were observed in ca-thodoluminescence (CL) spectra of some samples grown on Si/Ge and GaAs substrates.