Enhancement of Stability by Applying HAT-CN for Hole Modification With Good Water Resistance and Hole Extraction

摘要

A creative application of using HAT-CN as a hole modification layer (HML) in positive perovskite solar cells (PSCs) is demonstrated herein. This measure successfully improves the performance of devices in many aspects. Although HAT-CN owns a similar position of Fermi level with MoO3, there have been proved to be a much smoother interface. The devices using HAT-CN had a higher V-oc at 1.10 V over 1.06 V that was shown by devices using MoO3. Optimized devices remained PCE over 18% for 188 h resulting from compressing recombination better for owning higher hydrophobicity. The measure that using HAT-CN for modification proposed in this work was proved that HAT-CN provides a better ability of extracting holes and owns better water-resistance to be more stable.