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首页> 外文期刊>Photonics Journal, IEEE >Electro-Optic Plasmonic Modulator With Direct Coupling to Silicon Waveguides
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Electro-Optic Plasmonic Modulator With Direct Coupling to Silicon Waveguides

机译:直接耦合至硅波导的电光等离子体激元调制器

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A novel plasmonic Mach-Zehnder Interferometer is proposed with a nonlinear polymer. Orthogonal junction coupling between silicon and plasmonic waveguides is exploited to omit the need for tapers, and in turn, reduce the footprint. An extinction ratio of about 16 dB is produced at a voltage-length product of 47 Vm. An insertion loss of 3.38 dB is achieved including the coupling to and from the silicon access waveguide.A novel plasmonic Mach-Zehnder interferometer is proposed with a nonlinear polymer. Orthogonal junction coupling between silicon and plasmonic waveguides is exploited to omit the need for tapers, and in turn, reduce the footprint. An extinction ratio of about 16 dB is produced at a voltage-length product of 47 V μm. An insertion loss of 3.38 dB is achieved including the coupling to and from the silicon access waveguide. The orthogonal coupling provides wideband operation, high efficiency, low loss, and compact size for our design.
机译:提出了一种新型的非线性聚合物等离子体马赫曾德尔干涉仪。利用硅和等离子体波导之间的正交结耦合来消除对锥度的需要,进而减少了占位面积。电压长度乘积为47 Vm时,消光比约为16 dB。包括与硅访问波导之间的耦合,均实现了3.38 dB的插入损耗。提出了一种新型的非线性聚合物等离子体马赫-曾德尔干涉仪。利用硅和等离子体波导之间的正交结耦合来消除对锥度的需要,进而减少了占位面积。电压长度乘积为47 Vμm时,消光比约为16 dB。实现了3.38 dB的插入损耗,包括与硅访问波导之间的耦合。正交耦合为我们的设计提供了宽带工作,高效率,低损耗和紧凑的尺寸。

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