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首页> 外文期刊>Oxidation of Metals >Microstructural Evidence for Short-Circuit Oxygen Diffusion Paths in the Oxidation of a Dilute Ni-Cr Alloy
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Microstructural Evidence for Short-Circuit Oxygen Diffusion Paths in the Oxidation of a Dilute Ni-Cr Alloy

机译:Ni-Cr稀合金氧化过程中短路氧气扩散路径的微观结构证据

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A comparative study of high-temperature oxidation of Ni containing 1 at.% Cr and pure Ni was carried out. Instead of the conventional kinetics study using thermogravimetry, a microlithographic marker experiment was designed. Observation of the markers using cross-sectional TEM and SEM has revealed striking differences in the scale morphology, micro structures, and oxidation mechanisms between pure Ni and the Cr-doped Ni substrates. In particular, the results suggest that a small addition of Cr promotes significant inward transport of oxygen. Marker experiments revealed that NiO grown on pure Ni is wholly attributable to outward-cation diffusion. In contrast, NiO grown on Ni-1 at. % Cr exhibited formation of a substantial inner layer having a submicron grain size, established by the markers to have formed from oxygen ingress. For pure Ni, voids were observed to be distributed only within oxide grains. In contrast, for Ni containing 1 at.% Cr, elongated pores formed extensively along oxide-grain boundaries. Formation of new fine-grain oxide in these pores was observed to have sometimes completely reseated the void. It is, therefore, proposed that the transport of oxygen in the case of oxide scale grown on Ni-1 at.% Cr occurs via voids (pores) formed by vacancy coalescence at the grain boundaries.
机译:进行了含1at。%Cr的Ni和纯Ni的高温氧化的比较研究。代替使用热重分析的常规动力学研究,设计了微光刻标记实验。使用横截面TEM和SEM观察标记,发现纯Ni和掺杂Cr的Ni基体之间在尺度形态,微观结构和氧化机理上存在显着差异。特别地,结果表明少量添加Cr促进了氧气的显着向内运输。标记实验表明,在纯Ni上生长的NiO完全归因于向外阳离子的扩散。相反,NiO在Ni-1处生长。 %的Cr表现出形成具有亚微米晶粒尺寸的基本内层的形成,该内层由标记确定是由氧的进入形成的。对于纯镍,观察到空隙仅分布在氧化物晶粒内。相反,对于含1at。%Cr的Ni,沿氧化物-晶界广泛形成细长的孔。观察到在这些孔中形成新的细晶粒氧化物有时会完全重新填充空隙。因此,提出在Ni-1at。%Cr上生长氧化皮的情况下,氧的传输通过晶界处空位聚结形成的空隙(孔)发生。

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