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Matrix influence on the OLED emitter Ir(btp)_2(acac) in polymeric host materials - Studies by persistent spectral hole burning

机译:基质对聚合物基质材料中的OLED发射器Ir(btp)_2(acac)的影响-持续光谱空穴燃烧的研究

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摘要

Fundamental photophysical properties of the phosphorescent organometallic complex lr(btp)_2(acac) doped in the polymeric matrices PVK, PFO, and PVB, respectively, are investigated. PVK and PFO are frequently used as host materials in organic light emitting diodes (OLEDs). By application of the laser spectroscopic techniques of phosphorescence line narrowing and persistent spectral hole burning - improved by a synchronous scan technique -we studied the zero-field splitting (ZFS) of the T_1 state into the substatesⅠ,Ⅱ, and Ⅲ. Thus, we were able to probe the effects of the local environment of the emitter molecules in the different amorphous matrices. The magnitude of ZFS is determined by the extent of spin-orbit coupling (SOC) of the T_1 state to metal-to-ligand charge transfer (MLCT) states. Only by mixings of MLCT singlets, a short-lived and intense emission of the triplet state to the singlet ground state becomes possible. Thus, sufficiently large ZFS is crucial for favorable luminescence properties of emitter complexes for OLED applications. The analysis of the spectral hole structure resulting from burning provides information about the ZFS values and their statistical (inhomogeneous) distribution in the amorphous matrices. For lr(bt-p)_2(acac), we found a significant value of≈18 cm~(-1) for the splitting between the substates Ⅱ and Ⅲ for all three matrices. Interestingly, for PVK the width of the ZFS distribution is found to be ≈14 cm~(-1) - almost twice as large as for PFO and PVB. Consequently, for a considerable fraction of lr(btp)_2(acac) molecules in PVK, the ZFS is relatively small and thus, the effective SOC is weak. Therefore, it is indicated that a part of the emitter molecules shows a limited OLED performance.
机译:研究了分别掺杂在聚合物基体PVK,PFO和PVB中的磷光有机金属配合物lr(btp)_2(acac)的基本光物理性质。 PVK和PFO经常用作有机发光二极管(OLED)中的主体材料。通过应用磷光谱线变窄和持续光谱烧孔的激光光谱技术(通过同步扫描技术进行改进),我们研究了T_1状态进入子状态Ⅰ,Ⅱ和Ⅲ的零场分裂(ZFS)。因此,我们能够探究不同非晶态基质中发射体分子局部环境的影响。 ZFS的大小取决于T_1状态与金属至配体电荷转移(MLCT)状态的自旋轨道耦合(SOC)的程度。只有通过混合MLCT单线态,才可能将三线态短暂且强烈地发射到单线态基态。因此,足够大的ZFS对于OLED应用中的发射体配合物的良好发光性能至关重要。燃烧产生的光谱孔结构的分析提供了有关ZFS值及其在非晶态矩阵中的统计(不均匀)分布的信息。对于lr(bt-p)_2(acac),我们发现在所有三个矩阵的子状态Ⅱ和Ⅲ之间的分割,均具有≈18cm〜(-1)的显着值。有趣的是,对于PVK,ZFS分布的宽度约为≈14cm〜(-1)-几乎是PFO和PVB的两倍。因此,对于PVK中相当一部分的lr(btp)_2(acac)分子,ZFS相对较小,因此有效SOC较弱。因此,表明发射极分子的一部分显示出有限的OLED性能。

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