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Novel TFT-Based emission driver in high performance AMOLED display applications

机译:高性能AMOLED显示应用中的新型TFT的发射驱动器

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摘要

A novel integrated row driver for emission control with n-type thin-film transistors (TFTs) was proposed. A single stage of the proposed driving circuit consists of charge supplement unit, improved inverter, and power conservation unit besides input TFT and driving TFTs. Simulations were carried out with fabricated LTPS TFT. The results show the driving circuit achieves leakage prevention with no floating state and high reliability even under the Vth shift of 3 V. What's more, further measurement results show a 3 μs pulse width can be generated by the circuit, supporting 8k4k resolution with high refresh rate of 120 Hz. And the capability of low refresh rate (1 Hz) driving also can be achieved without degradation. In addition, only three control signals (two non-overlap clocks and one input signal) are used in the proposed circuit, where input signal of present stage is connected with the output of its previous stage. That means the row driver can work under independent control and be not susceptible, which contributes to generating adjustable pulse width for pulse width modulation (PWM) in active matrix organic light-emitting diode (AMOLED) displays.
机译:提出了一种具有N型薄膜晶体管(TFT)的发射控制的新型集成行驱动器。除了输入TFT和驱动TFT之外,所提出的驱动电路的单个阶段由充电单元,改进的逆变器和节电单元组成。用制造的LTPS TFT进行模拟。结果表明,即使在3 V的vth偏移下,驱动电路也没有浮动状态和高可靠性的泄漏预防。更重要的是,进一步的测量结果显示3μs脉冲宽度可以通过电路产生8k4k分辨率率120 Hz。也可以在不降低的情况下实现低刷新率(1 Hz)驾驶的能力。另外,在所提出的电路中仅使用三个控制信号(两个非重叠时钟和一个输入信号),其中当前级的输入信号与其前一级的输出连接。这意味着行驾驶员可以在独立控制下工作并且不容易受到影响,这有助于在有源矩阵有机发光二极管(AMOLED)显示器中产生脉冲宽度调制(PWM)的可调脉冲宽度。

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  • 来源
    《Organic Electronics》 |2021年第6期|106160.1-106160.5|共5页
  • 作者单位

    Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 China;

    Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 China;

    Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 China;

    Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 China;

    BOE Technology Group Co. Ltd. No. 9 Dize Road BDA Beijing 100176 China;

    BOE Technology Group Co. Ltd. No. 9 Dize Road BDA Beijing 100176 China;

    BOE Technology Group Co. Ltd. No. 9 Dize Road BDA Beijing 100176 China;

    Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 China;

    Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 China;

    Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 China;

    Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 China;

    Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Row driver; Emission control; Thin-film transistor (TFT); Active matrix organic light-emitting diode(AMOLED);

    机译:行司机;排放控制;薄膜晶体管(TFT);有源矩阵有机发光二极管(Amoled);

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