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Highly efficient exciplex organic light-emitting diodes by exciplex dispersion in the thermally activated delayed fluorescence host

机译:通过在热活化延迟荧光主体中的激基复合物分散形成高效的激基复合物有机发光二极管

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摘要

In this work, we describe a new approach of improving the external quantum efficiency (EQE) of exciplex organic light-emitting diodes (OLEDs). A new approach of dispersing the exciplex in the thermally activated delayed fluorescence (TADF) host was developed to increase the EQE of the exciplex OLEDs. The new emitting layer structure was made up of a mixture of TADF material and an n-type material which can generate exciplex with the TADF material. The content of the n-type material was maintained below 10 wt % to have a morphology with the exciplex dispersed in the TADF matrix material. The emitting layer structure with the exciplex dispersed in the TADF host suppressed exciton quenching and improved the photoluminescence quantum yield of the exciplex. As a result, the exciplex OLEDs with the n-type material content of 1 wt% showed high EQE of 15.3% compared with EQE of 10.8% of the conventional exciplex OLEDs with the n-type material content of 50%.
机译:在这项工作中,我们描述了一种提高激基复合有机发光二极管(OLED)的外部量子效率(EQE)的新方法。开发了一种将激基复合物分散在热活化延迟荧光(TADF)主体中的新方法,以提高激基复合物OLED的EQE。新的发射层结构由TADF材料和可与TADF材料产生激基复合物的n型材料的混合物组成。 n型材料的含量保持在10wt%以下,以使激基复合物分散在TADF基质材料中而具有形态。激基复合物分散在TADF主体中的发光层结构抑制了激子猝灭并提高了激基复合物的光致发光量子产率。结果,与n型材料含量为50%的常规激基复合物OLED的EQE为10.8%相比,n型材料含量为1wt%的激基复合物OLED显示出15.3%的高EQE。

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