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Synthesis and characterization of heterocyclic conjugated polymers containing planar benzo[c]cinnoline and tetraazapyrene structures for organic field-effect transistor application

机译:含平面苯并[c] cinnoline和四氮杂ap结构的杂环共轭聚合物的合成与表征,用于有机场效应晶体管

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Heterocyclic conjugated polymers BZCTVT and TAPTVT containing benzo[c]cinnoline (BZC) and tetraazapyrene (TAP), respectively, were prepared by using Stille coupling polymerization in microwave reactor. BZC and TAP act as acceptors and thiophene-vinylene-thiophene (TVT) acts as donors. Alkylated thiophene is the linker between acceptor and donor. This is the first time that tetraazapyrene was incorporated into conjugated polymers. The films of BZCTVT and TAPTVT showed maximum absorption wavelength at 522 and 534 nm, respectively. From cyclic voltammertry measurement, TAPTVT and BZCTVT exhibited low LUMO (-3.61 and -3.47 eV) and HOMO (-5.64 and -5.63 eV) energy levels. Even though BZC and TAP were planar structures, BZCTVT and TAPTVT showed large dihedral angles between alkylated thiophene and TVT (10.8-22.6 degrees), and between alkylated thiophene and BZC and TAP (22.2-30.3 degrees) based on their simulated energy-minimized geometry. The bottom-gate, top-contact OFETs based on TAPTVT and BZCTVT exhibited only p-channel behavior with hole mobility of 4.63 x 10(-4) and 1.04 x 10(-4) cm(2) V-1 s(-1) and current on/off ratios greater than 10(4) after thermal annealing. Grazing incidence X-ray diffraction (GIXRD) patterns suggested that thin films of TAPTVT and BZCTVT preferred edge-on orientation.
机译:通过在微波反应器中使用Stille偶联聚合反应分别制备了含苯并[c] cinnoline(BZC)和四氮杂ap烯(TAP)的杂环共轭聚合物BZCTVT和TAPTVT。 BZC和TAP充当受体,噻吩-亚乙烯基-噻吩(TVT)充当供体。烷基化噻吩是受体和供体之间的连接基。这是将四氮杂ap烯首次引入共轭聚合物中。 BZCTVT和TAPTVT的膜分别在522和534 nm处显示最大吸收波长。通过循环伏安法测量,TAPTVT和BZCTVT表现出较低的LUMO(-3.61和-3.47 eV)和HOMO(-5.64和-5.63 eV)能级。即使BZC和TAP是平面结构,但BZCTVT和TAPTVT根据模拟的能量最小化几何结构仍显示出烷基化噻吩和TVT之间的大二面角(10.8-22.6度),以及烷基化噻吩与BZC和TAP之间的大二面角(22.2-30.3度) 。基于TAPTVT和BZCTVT的底栅,顶接触式OFET仅显示p沟道行为,空穴迁移率分别为4.63 x 10(-4)和1.04 x 10(-4)cm(2)V-1 s(-1) ),热退火后的电流开/关比大于10(4)。掠入射X射线衍射(GIXRD)模式表明TAPTVT和BZCTVT薄膜更倾向于边沿取向。

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