Organic light-emitting devices based on new rare earth complex Tb(p-CIBA)_3phen

摘要

A new rare earth complex Tb(p-CIBA)_3 phen was synthesized and introduced into organic light emitting devices (OLEDs) as emitting material. The Tb(p-CIBA)_3 phen was doped into PVK to improve the film-forming and hole-transporting property. Two kinds of devices were fabricated. The device structure is as the following. Single-layer device: ITO/PVK:Tb(p-CIBA)_3 phen /LiF/Al; double-layer device: ITO/PVK: Tb(p-CIBA)_3 phen /AIQ/LiF/Al.The performances of both devices were investigated carefully. We found that the emission of PVK was completely restrained,and only the green emission was observed from the electroluminescence. The full width at half maximum (FWHM) was less than 10 nm.The highest EL brightness of the single-layer device is 25.4 cd/cm~2 at a fixed bias of 18 V,and the highest EL brightness of the double-layer device reaches 234.8 cd/cm~2 at a voltage of 20 V.