A novel optical diagnostic technique for analyzing the recrystallization characteristics of polycrystalline silicon thin films following fronts1De and backs1De excimer laser irradiation

摘要

Excimer laser annealing (ELA) is a w1Dely used technique for producing polycrystalline silicon (poly-Si) thin films. An optical inspection system with simple optical arrangements for rap1D measurement of recrystallization results of poly-Si thin films is developed in this study. The recrystallization results after both fronts1De ELA and backs1De ELA can be easily visible from the profile of peak power density distribution using the optical inspection system developed with an optimized moving velocity of 0.312 mm/s of the specimen. The method of backs1De ELA is suggested for batch production of low-temperature polycrystalline silicon thin-film transistors due to higher laser beam utilization efficiency and lower surface roughness of poly-Si films.