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首页> 外文期刊>Optical Materials >Fabrication of Yb~(3+)/Er~(3+) codoped Bi_2O_3-WO_3-TeO_2 pedestal type waveguide for optical amplifiers
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Fabrication of Yb~(3+)/Er~(3+) codoped Bi_2O_3-WO_3-TeO_2 pedestal type waveguide for optical amplifiers

机译:Yb〜(3 +)/ Er〜(3+)共掺杂Bi_2O_3-WO_3-TeO_2基座型光放大器波导的制作

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We report, for the first time to our knowledge, experimental results on pedestal waveguides produced with Yb~(3+)Er~(3+) codoped Bi_2O_3-WO_3-TeO_2 thin films deposited by RF Sputtering for photonic applications. Thin films were deposited using Ar/O_2 plasma at 5 mTorr pressure and RF power of 40 W on substrates of silicon wafers. The definition of the pedestal waveguide structure was made using conventional optical lithography followed by plasma etching. Propagation losses around 2.0 dB/cm and 2.5 dB/cm were obtained at 633 and 1050 nm, respectively, for waveguides in the 20-100 μm width range. Single-mode propagation was measured for waveguides width up to 10μm and 12 μm, at 633 nm and 1050 nm, respectively; for larger waveguides widths multi-mode propagation was obtained. Internal gain of 5.6 dB at 1530 nm, under 980 nm excitation, was measured for 1.5 cm waveguide length (~3.7 dB/cm). The present results show the possibility of using Yb~(3+)/Er~(3+) codoped Bi_2O_3-WO_3-TeO_2 pedestal waveguide for optical amplifiers.
机译:我们第一次了解到,我们报道了用RF溅射沉积的Yb〜(3+)Er〜(3+)共掺杂Bi_2O_3-WO_3-TeO_2薄膜生产的用于光子应用的基座波导的实验结果。使用Ar / O_2等离子体以5 mTorr的压力和40 W的RF功率在硅晶片的基板上沉积薄膜。基座波导结构的定义是使用常规的光刻技术,然后进行等离子刻蚀。对于20-100μm宽度范围的波导,分别在633和1050 nm处获得约2.0 dB / cm和2.5 dB / cm的传播损耗。测量了分别在633 nm和1050 nm处分别达到10μm和12μm的波导宽度的单模传播;对于更大的波导宽度,获得了多模传播。对于1.5 cm的波导长度(〜3.7 dB / cm),在980 nm激发下在1530 nm处的内部增益为5.6 dB。目前的结果表明使用Yb〜(3 +)/ Er〜(3+)共掺杂的Bi_2O_3-WO_3-TeO_2基座波导的可能性。

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