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首页> 外文期刊>Optical Materials >Development of persistent phosphor of Eu~(2+) doped Ba_2SiO_4 by Er~(3+) codoping based on vacuum referred binding energy diagram
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Development of persistent phosphor of Eu~(2+) doped Ba_2SiO_4 by Er~(3+) codoping based on vacuum referred binding energy diagram

机译:基于真空参考结合能图的Er〜(3+)共掺杂制备Eu〜(2+)掺杂Ba_2SiO_4持久性荧光粉

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摘要

We have developed the Ba2SiO4: Eu2+-Er3+ persistent phosphor. The vacuum referred binding energy (VRBE) diagram of the Ba2SiO4 host with the 4f ground states of divalent and trivalent lanthanide ions in the host band gap was constructed from the obtained spectroscopic data and the Dorenbos's procedure. From the constructed diagram, the VRBE values of the conduction band (CB) bottom and valence band (VB) top were estimated to be -0.66 and -8.27 eV, respectively. From the energy gap between the CB bottom and 4f ground states of divalent lanthanide ions, we selected the Er3+ ion as an efficient co-dopant because the trap depth was estimated to be 0.64 eV, suitable for improving the persistent luminescence duration. The Eu2+-Er3+-codoped sample showed persistent luminescence intensity of over 0.32 mcd/m(2) for 7 h duration. The initial persistent luminance intensity of the Eu2+-2%Er3+-codoped sample was found to be 250 times stronger than that of the only Eu2+-doped sample.
机译:我们已经开发了Ba2SiO4:Eu2 + -Er3 +持久性荧光粉。根据获得的光谱数据和Dorenbos程序,构建了Ba2SiO4主体的真空参考结合能(VRBE)图,该主体在带隙中具有二价和三价镧系离子的4f基态。根据构造图,导带(CB)底部和价带(VB)顶部的VRBE值分别估计为-0.66和-8.27 eV。从二价镧系离子的CB底态与4f基态之间的能隙,我们选择Er3 +离子作为有效的共掺杂剂,因为据估计其陷阱深度为0.64 eV,适合于改善持续发光时间。 Eu2 + -Er3 +掺杂的样品显示持续7 h的持续发光强度超过0.32 mcd / m(2)。发现掺Eu2 + -2%Er3 +样品的初始持久亮度强度是仅掺Eu2 +样品的初始持久亮度强度的250倍。

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