首页> 外文期刊>Optical Materials >Photoluminescence and scintillation of LGS (La_3Ga_5SiO_(14)), LNGA (La_3Nb_(0.5)Ga_(5.3)Al_(0.2)O_(14)) and LTGA (La3Ta_(0.5)Ga_(5.3)Al_(0.2)O_(14)) single crystals
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Photoluminescence and scintillation of LGS (La_3Ga_5SiO_(14)), LNGA (La_3Nb_(0.5)Ga_(5.3)Al_(0.2)O_(14)) and LTGA (La3Ta_(0.5)Ga_(5.3)Al_(0.2)O_(14)) single crystals

机译:LGS(La_3Ga_5SiO_(14)),LNGA(La_3Nb_(0.5)Ga_(5.3)Al_(0.2)O_(14))和LTGA(La3Ta_(0.5)Ga_(5.3)Al_(0.2)O_(14)的光致发光和闪烁)单晶

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摘要

To examine scintillation response of piezoelectric crystals the ~(241)Am 5.5 MeV a-ray excited emission spectra of langasite family crystals, LGS (La_3Ga_5SiO_(14)). LNGA (La_3Nb_(0.5)Ga_(5.3)Al_(0.2)O_(14)) and LTGA (La_3Ta_(0.5)-Ga_(5.3)Al_(0.2)O_(14) were measured. Dominating emission bands were observed at 378 nm for LGS, 556 nm for LNGA and 425 nm for LTGA. X-ray excited radioluminescence intensity of these crystals was quantitatively compared with BGO standard scintillator. Photoluminescence 2D-spectra were measured as well and compared with radioluminescence ones. In LTGA also photoluminescence decays were measured for two dominant contributing emission centers. Observed emission bands within 300-360 nm and beyond 400 nm most probably belong to self-trapped or trapped excitons and lattice defects, respectively.
机译:为了检查压电晶体的闪烁响应,langasite族晶体LGS(La_3Ga_5SiO_(14))的〜(241)Am 5.5 MeV a射线激发发射光谱。测定LNGA(La_3Nb_(0.5)Ga_(5.3)Al_(0.2)O_(14))和LTGA(La_3Ta_(0.5)-Ga_(5.3)Al_(0.2)O_(14),在378nm观察到主要的发射带。对于LGS,LNGA为556 nm,LTGA为425 nm,将这些晶体的X射线激发放射发光强度与BGO标准闪烁体进行了定量比较,还测量了2D光谱并将其与放射致发光光谱进行了比较。测量了两个主要的贡献发射中心,在300-360 nm范围内和超过400 nm范围内观察到的发射带最有可能分别属于自陷或陷获的激子和晶格缺陷。

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