High-voltage active quenching and resetting circuit for SPADs in 0.35 μm CMOS for raising the photon detection probability

摘要

Alija Dervic$1Bernhard Steindl$1Michael Hofbauer$1Horst Zimmermann; $1Vienna University of Technology, Institute of Electrodynamics, Microwave and Circuit Engineering, Faculty of Electrical Engineering, Vienna, Austria; alija.dervic@tuwien.ac.at;;;; A fully integrated single-photon avalanche diode (SPAD) using a high-voltage quenching circuit fabricated in a 0.35-μm CMOS process is proposed. The quenching circuit features a quenching voltage of 9.9 V, which is three times the nominal supply voltage to increase the photon detection probability (PDP). To prove the quenching performance, the circuit has been integrated together with a large-area SPAD having an active diameter of 90 μm. Experimental verification shows a maximum PDP of 67.8% at 9.9 V excess bias at a wavelength of 642 nm. single-photon avalanche diode; active quenching; high-voltage quenching; photon detection probability; optoelectonic integrated circuits; photodetectors.