Comparative studies on the DC and RF performances of conventional HEMT and double quantum well heterostructure

摘要

In this work, we propose a novel double quantum well (QW) high electron mobility transistor (HEMT) structure. The DC and RF performances of this proposed structure are compared with those of conventional single QW HEMT. According to this work, the peak drain current of 651 mA/mm is achieved in conventional single QW HEMT, and the peak drain current of 758 mA/mm is achieved in proposed double QW HEMT. Also, the peak transconductances related to the proposed HEMT and conventional HEMT are compared. The peak current gain cut-off frequencies of two structures are compared. Also, the peak power gain cut-off frequencies of two structures are compared. According to these comparisons by simulation studies, the proposed double QW HEMT is more electrically efficient than the conventional single QW HEMT. Therefore, this present work may be a suitable prediction for the experimental fabrication of proposed double QW HEMT in future. This work may be suitable in sensor related applications and high frequency applications.