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机译:氧浓度对射频磁控溅射ZnO薄膜结构和光学性能的影响
Univ Witwatersrand Wits Mat Energy Res Grp Private Bag 3 ZA-2050 Johannesburg South Africa|Univ Witwatersrand Wits Mat Phys Res Inst Sch Phys Private Bag 3 ZA-2050 Johannesburg South Africa|Hist Museum Phys & Study & Res Ctr Enrico Fermi I-00184 Rome Italy;
Univ Witwatersrand Wits Sch Chem Private Bag 3 ZA-2050 Johannesburg South Africa;
Univ West Attica Perou Ralli & Thevon 250 Egaleo Greece;
Univ Witwatersrand Wits Mat Energy Res Grp Private Bag 3 ZA-2050 Johannesburg South Africa|Univ Witwatersrand Wits Mat Phys Res Inst Sch Phys Private Bag 3 ZA-2050 Johannesburg South Africa;
Univ Witwatersrand Wits Mat Energy Res Grp Private Bag 3 ZA-2050 Johannesburg South Africa|Univ Witwatersrand Wits Sch Chem Private Bag 3 ZA-2050 Johannesburg South Africa;
Zinc oxide; Photo-luminescence; Thin films; Raman;
机译:直流磁控溅射沉积ZnO:Ga薄膜的性能:掺杂Ga的浓度对结构和光学性能的影响科学出版物
机译:直流磁控溅射沉积ZnO:Ga薄膜的性能:掺杂Ga的浓度对结构和光学性能的影响
机译:氧对射频磁控溅射沉积ZnO薄膜结构和光学性能的影响
机译:通过RF磁控溅射形成的纳米晶ZnO薄膜的氧分压影响结构,形态学和光学性质
机译:射频磁控溅射未掺杂镧锰矿薄膜的结构,磁性和表面特性。
机译:射频磁控溅射制备(MgAl)共掺杂ZnO薄膜的光电性能研究与研究
机译:错误:“低温缓冲液,RF功率和退火对由RF-磁控溅射生长的ZnO / Al2O3(0001)薄膜结构和光学性质的影响”J。苹果。物理。 106,023511(2009)