机译:润湿层对截断金字塔形量子点电子结构的影响分析
School of Electrical and Electronic Engineering, Nanyang Technological University,50 Nanyang Avenue, Singapore 639798, Singapore;
Institute of Optoelectronic Material and Technology, South China Normal University,51063 Guangzhou, People's Republic of China;
School of Electrical and Electronic Engineering, Nanyang Technological University,50 Nanyang Avenue, Singapore 639798, Singapore;
Institute of High Performance Computing, A*STAR,Singapore 117528, Singapore;
electronic structures; fourier-transform based k · p method; InAs/GaAs quantum dots; wetting layer effect;
机译:润湿层对截断金字塔形量子点电子结构的影响分析
机译:润湿层涨落引起的InAs / GaAs量子点的电子能带结构和电子自旋
机译:InAs / GaInAsP / InP量子点激光器结构中量子点和润湿层状态的调制反射率探测
机译:上截棱锥量子点的电子结构润湿层效应的分析
机译:用于光电应用的图案化量子点和逆量子点有源层。
机译:量子点形成之前InAs润湿层表面重构域的统计分析
机译:润湿层对InAs自组装量子点应变和电子结构的影响
机译:退火对Gaas基体中自组装Inas量子点和润湿层的影响