Passively Q-switched laser performance of a composite Nd:YVO_4/Nd:YVO_4/Nd:YVO_4 crystal with GaAs saturable absorber

摘要

By using GaAs wafer as the saturable absorber, the laser-diode pumped passively Q-switched composite Nd: YVO4 laser has been successfully demonstrated. For this passively Q-switched operation, the average output power obtained is as high as 846 mW at the incident pump power of 5.31 W, while the pulse duration is as short as 14.5 ns. The largest single-pulse energy of 2.49 μJ and the highest peak power of 166 W are obtained. The GaAs saturable absorber with thickness of 400 μm has shown more excellent laser performance comparing with 700 μm thick GaAs.