Circuit-level implementation of quantum-dot VCSEL

摘要

In this paper, for the first time a circuit model of quantum dot InGaAs-GaAs VCSEL including thermal effects is presented. The model is able to predict L-I characteristics for a range of ambient temperatures that the simulation results reveal a good agreement with experimental data reported in literatures. Also the effects of carrier dynamics on the QD-VCSEL performance are simulated that is accordance with results reported by other researcher. The parameters affecting high-speed optical modulation techniques, particularly on-off keying, such as turn-on delay, relaxation oscillations frequency (f_(ro)) and cutoff frequency for different level modulation currents are investigated. The model is compatible with circuit analysis programs.