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Squeezing Out the Leakage

机译:挤压泄漏

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As is commonly known, all silicon transistors drain a device's batteries by using both active power and leakage power. It is not so widely appreciated that leakage has become a major concern for IC designers who work with submicron (65 nm and below) process technologies. In fact, leakage can account for as much as 30 to 50 percent of total IC power consumption which is one reason why you have to charge your laptop and cell phone so often. If you compress a vein in your arm, this restricts the flow of blood. Oddly enough, the opposite is true of silicon: The more you compress it, the more easily electrons can move through it. This is why transistors in modern microchips are continuously exposed to pressures of up to 10,000 ATM (nearly 147,000 PSI). Unfortunately, squeezing the semiconductor also increases its leakage current.
机译:众所周知,所有硅晶体管都通过使用有功功率和泄漏功率来消耗设备的电池。对于使用亚微米(65纳米及以下)工艺技术的IC设计人员来说,泄漏已成为人们关注的主要问题,这一点尚未得到广泛认可。实际上,泄漏可能占IC总功耗的30%至50%,这就是为什么您必须如此频繁地为笔记本电脑和手机充电的原因之一。如果压缩手臂中的静脉,则会限制血液流动。奇怪的是,硅的情况恰恰相反:压缩得越多,电子越容易通过它。这就是为什么现代微芯片中的晶体管不断承受高达10,000 ATM(近147,000 PSI)的压力的原因。不幸的是,挤压半导体也会增加其泄漏电流。

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    《Nuts & volts 》 |2014年第3期| 8-8| 共1页
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