Experimental and modeling study on increasing accuracy of strain measurement by ion beam analysis in SiGe strained layer thin films

摘要

We have used Rutherford backscattering spectrometry to characterize Si/ε-Si_(0.8)Ge_(0.2)/Si strained-layer heterogeneous epitaxial structures. Two-dimensional yield mapping of backscattered 2 MeV He atoms as a function of tilting angles around off-normal <110> axis are obtained. For Si/Si_(0.8)Ge_(0.2)/Si with buried strained layer, we observe distortion of (110) planar minimum in yield mapping from Ge. The distortion features slightly decreasing angular offsets with decreasing tilting away from <110> axis. Our finding suggests that strain measurements using one dimensional angular scan within or close to (100) plane will lead to strain underestimation. A two dimensional yield mapping is preferred over one dimensional angular scan for high accuracy in strain measurements, so the angular off-set can be measured in a region free of distortion. The experimental observations are in good agreement with our modeling prediction.